Hall effect ferromagnetic random access memory device and its me

Details Hall effect ferromagnetic random access memory device and its me Hall effect ferromagnetic random access memory device and its me

1998-12-22

2000-10-31

Bowers, Charles

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

438 57, 438 59, 257421, 257425, 257427, H01L 2100

Patent

active

061401390

ABSTRACT:
A Hall effect ferromagnetic non-volatile random access memory cell comprising a Hall effect sensor adjacent to a ferromagnetic bit which is surrounded by a drive coil. The coil is electrically connected to a drive circuit, and when provided with an appropriate current creates a residual magnetic field in the ferromagnetic bit, the polarity of which determines the memory status of the cell. The Hall effect sensor is electrically connected via four conductors to a voltage source, ground, and two read sense comparator lines for comparing the voltage output to determine the memory status of the cell. The read and write circuits are arranged in a matrix of bit columns and byte rows. A method for manufacturing said Hall effect ferromagnetic non-volatile random access memory cell.

REFERENCES:
patent: 5075247 (1991-12-01), Mathews
patent: 5289410 (1994-02-01), Katti et al.
patent: 5295097 (1994-03-01), Lienau
patent: 5329480 (1994-07-01), Wu et al.
patent: 5477482 (1995-12-01), Prinz
patent: 5661062 (1997-08-01), Prinz

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