Hall effect device with overlapping flux concentrators

Details Hall effect device with overlapping flux concentrators Hall effect device with overlapping flux concentrators

1984-06-28

1986-05-06

James, Andrew J.

Electrical resistors

Resistance value responsive to a condition

Magnetic field or compass

324251, 324260, 357 27, 338 32R, 307308, H01L 4300, H01L 4302

Patent

active

045875090

ABSTRACT:
A Hall effect device for responding to weak magnetic fields uses a small chip of gallium arsenide located between the overlapped ends of two flux concentrators. The spacing between the concentrators may be as small as 95 micrometers. The flux concentrator, which serve to enhance the device's sensitivity are made of amorphous magnetic material, i.e. a metallic glass, which has high permeability.

REFERENCES:
patent: 4398342 (1983-08-01), Pitt et al.

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