Electricity: measuring and testing – Measuring – testing – or sensing electricity – per se – Magnetic saturation
Reexamination Certificate
2008-02-18
2009-12-01
Tang, Minh N. (Department: 2829)
Electricity: measuring and testing
Measuring, testing, or sensing electricity, per se
Magnetic saturation
Reexamination Certificate
active
07626377
ABSTRACT:
A Hall-effect device with a merged and/or non-merged complementary structure in order to cancel stress induced offsets includes an n-type epitaxial Hall element and a p-type Hall element. The p-type Hall element can be implanted directly on top of the n-type epitaxial Hall element. The merged Hall elements can be biased in parallel to provide a zero-bias depletion layer throughout for isolation. The output of the p-type Hall element can be connected to the geometrically corresponding output of the n-type epitaxial Hall element through a suitable resistance. The output signal can be taken at the outputs of the n-type element. The Hall-effect device can be constructed utilizing standard processes.
REFERENCES:
patent: 3994010 (1976-11-01), Geske
patent: 4025941 (1977-05-01), Kanda et al.
patent: 4660065 (1987-04-01), Carvajal et al.
patent: 4673964 (1987-06-01), Popovic et al.
patent: 4829352 (1989-05-01), Popovic et al.
patent: 5119166 (1992-06-01), Sridhar
patent: 5528067 (1996-06-01), Farb
patent: 5614754 (1997-03-01), Inoue
patent: 2005/0230769 (2005-10-01), Lilian et al.
patent: 2006/0157809 (2006-07-01), Alimi et al.
Kilian Wayne T.
Morales Gilberto
Honeywell International , Inc.
Lopez Kermit D.
Nguyen Tung X
Ortiz Luis M.
Tang Minh N.
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