Hall effect device formed in an epitaxial layer of silicon for s

Details Hall effect device formed in an epitaxial layer of silicon for s Hall effect device formed in an epitaxial layer of silicon for s

1995-07-17

1996-11-05

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

257423, 257426, 257427, 7351408, 7351431, 73DIG3, 3242072, 324251, 324252, 338 32H, H01L 2982, H01L 4300

Patent

active

055720587

ABSTRACT:
A vertical Hall element is formed within the epitaxial layer of a semiconductor and isolated from other components by a P type isolation diffusion. A position defining diffusion is used to accurately locate a plurality of openings within the position defining diffusion where contact diffusions are made. The position defining diffusion is made simultaneously with the base diffusion for transistors within the integrated circuit and the contact diffusions are made simultaneously with the emitter diffusion of transistors within the integrated circuit. Five contact diffusions are provided on the upper surface of the epitaxial layer and generally aligned within the region defined as the Hall element by the isolation diffusions. The center contact is used to provide electrical current flowing through the Hall effect element. Electrical current is split and flows to the two end contact diffusions. The remaining two contact diffusions are used as sensing contacts and are each placed between the center contact and one of the two end contacts. By using the openings within the base diffusion, the contact diffusions can be accurately located and sized in order to improve the efficiency, sensitivity and accuracy of the vertical Hall element.

REFERENCES:
patent: 4829352 (1989-05-01), Popovic et al.
patent: 4929993 (1990-05-01), Popovic
patent: 5323050 (1994-06-01), Ristic
patent: 5530345 (1996-06-01), Murari et al.
Popovic, Hall Effect Devices, Adam Hilger, Bristol, England, 1991, pp. 1-307.

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