Hall device

Details Hall device Hall device

1991-05-09

1992-11-10

Robinson, Ellis P.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

357 25, 428336, 428408, 428469, 428697, 428698, 428701, 428704, H01L 2966, 357, 357

Patent

active

051628864

ABSTRACT:
A Hall device having an active part made from semiconductor diamond. The Hall device works even at high temperature or in corrosive atmosphere. Boron doped diamond is suitable for controlling the acceptor concentration.

REFERENCES:
patent: 4783368 (1988-11-01), Yamamoto et al.
patent: 4863529 (1989-09-01), Imai et al.
Geis, "Growth of Textured Diamond Films on Foreign Substrates from Attached Seed Crystals" Appl. Phy. Lett vol. 55(6) 1989.
Spitsyn et al., "Vapor Growth of Diamond on Diamond & Other Surfaces" Journ. of Cry. Growth, 52(1981).
Farabaugh et al., "Growth of Diamond Films by Hot Filament CVD" SPIE vol. 969 Diamond Optics (1988).

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