Compositions – Etching or brightening compositions
Reexamination Certificate
2006-03-23
2010-10-26
Ahmed, Shamim (Department: 1713)
Compositions
Etching or brightening compositions
C051S307000, C106S003000
Reexamination Certificate
active
07820067
ABSTRACT:
The inventive chemical-mechanical polishing system comprises a polishing component, a liquid carrier, an oxidizing agent, and a halogen anion. The inventive method comprises chemically-mechanically polishing a substrate with the polishing system.
REFERENCES:
patent: 5196353 (1993-03-01), Sandhu et al.
patent: 5433651 (1995-07-01), Lustig et al.
patent: 5609511 (1997-03-01), Moriyama et al.
patent: 5643046 (1997-07-01), Katakabe et al.
patent: 5658183 (1997-08-01), Sandhu et al.
patent: 5730642 (1998-03-01), Sandhu et al.
patent: 5838447 (1998-11-01), Hiyama et al.
patent: 5872633 (1999-02-01), Holzapfel et al.
patent: 5893796 (1999-04-01), Birang et al.
patent: 5949927 (1999-09-01), Tang
patent: 5964643 (1999-10-01), Birang et al.
patent: 6294027 (2001-09-01), Li et al.
patent: 6294072 (2001-09-01), Fairbourn
patent: 6315803 (2001-11-01), Ina et al.
patent: 6316366 (2001-11-01), Kaufman et al.
patent: 6362104 (2002-03-01), Wang et al.
patent: 6435947 (2002-08-01), Mueller et al.
patent: 6447563 (2002-09-01), Mahulikar
patent: 6582761 (2003-06-01), Nishimoto et al.
patent: 6635186 (2003-10-01), Small et al.
patent: 6641630 (2003-11-01), Sun
patent: 6719920 (2004-04-01), Miller
patent: 6783432 (2004-08-01), Li et al.
patent: 6812193 (2004-11-01), Brigham et al.
patent: 6821309 (2004-11-01), Singh et al.
patent: 6852631 (2005-02-01), Miller
patent: 7014534 (2006-03-01), Oshima et al.
patent: 2002/0104269 (2002-08-01), Sun et al.
patent: 2003/0017785 (2003-01-01), Ueda et al.
patent: 2003/0168627 (2003-09-01), Singh et al.
patent: 2005/0097825 (2005-05-01), Bian
patent: 2005/0104048 (2005-05-01), Thomas et al.
patent: 2006/0030158 (2006-02-01), Carter et al.
patent: 2006/0037251 (2006-02-01), Kurata et al.
Ahmed Shamim
Cabot Microelectronics Corporation
Gettel Nancy J.
Omholt Thomas E.
Weseman Steven D.
LandOfFree
Halide anions for metal removal rate control does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Halide anions for metal removal rate control, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Halide anions for metal removal rate control will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4237697