Halftone phase shift photomask, halftone phase shift photomask b

Details Halftone phase shift photomask, halftone phase shift photomask b Halftone phase shift photomask, halftone phase shift photomask b

1996-10-17

1998-04-14

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

G03F 900

Patent

active

057389594

ABSTRACT:
A halftone phase shift photomask having a sufficiently high transmittance for light of short wavelength and usable for high-resolution lithography effected by exposure using deep-ultraviolet+radiation, e.g., krypton fluoride excimer laser light. The halftone phase shift photomask has on a transparent substrate a halftone phase shift layer which includes at least one layer composed mainly of a chromium compound. The chromium compound contains at least fluorine atoms in addition to chromium atoms. A transmittance higher than a predetermined level can be obtained even in exposure carried out at a relatively short wavelength. The photomask can be used for exposure using deep-ultraviolet+radiation, e.g., krypton fluoride excimer laser light (wavelength: 248 nm). Thus, high-resolution lithography can be realized. Since the photomask can be formed by approximately the same method as in the case of the conventional photomasks, it is possible to improve the yield and reduce the cost.

REFERENCES:
patent: 5380608 (1995-01-01), Miyoshita et al.
patent: 5419988 (1995-05-01), Mohri et al.
Patent Abstracts of Japan, vol. 014, No. 565 (P-1143), Dec. 1990 for JP-A-02 242252 (Toppan Printing Co., Ltd.), 26 Sep. 1990.
Patent Abstracts of Japan, vol. 016, No. 407 (P-1411), Aug. 1992 for JP-A-04 136854 (Hitachi Ltd), 11 May 1992.

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