Halftone phase shift photomask comprising a single layer of half

Details Halftone phase shift photomask comprising a single layer of half Halftone phase shift photomask comprising a single layer of half

1994-12-16

1997-02-18

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430322, 430324, G03F 900

Patent

active

056040601

ABSTRACT:
The invention provides a halftone phase shift photomask that is of much more simplified structure and so can be fabricated much more easily, which comprises a transparent substrate 10 and a single halftone light-blocking and phase shift layer 11 that is formed on the surface thereof according to a predetermined pattern and is made up of a material of homogeneous composition, characterized in that:
said single halftone light-blocking and phase shift layer has a film thickness d that is virtually equal to a value defined by

REFERENCES:
patent: 5286581 (1994-02-01), Lee
patent: 5322748 (1994-06-01), Watakabe et al.
patent: 5409789 (1993-07-01), Ito
Nakajima et al, ( "Attenuated Phase-Shifting Mask with a single-layer absorptive shifter of CrO, CrON, MoSi and MoSiON filter"; SPIE Meeting, Mar. 1994, paper No. 2197-10).

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