Halftone phase shift mask blank, halftone phase shift mask...

Details Halftone phase shift mask blank, halftone phase shift mask... Halftone phase shift mask blank, halftone phase shift mask...

2005-02-23

2008-09-02

Rosasco, Stephen (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

07419749

ABSTRACT:
In a halftone phase shift mask blank comprising a halftone phase shift film on a substrate which is transparent to exposure light, the halftone phase shift film comprises a metal, silicon, and optionally oxygen and nitrogen. The halftone phase shift film experiences a phase difference change of up to 1 deg. and a transmittance change of up to 0.2% before and after it is exposed to light in a cumulative dose of 1 kJ/cm2. The halftone phase shift film has excellent resistance to exposure light, specifically high-energy exposure light of short wavelength such as ArF or F2laser beam (193 or 157 nm).

REFERENCES:
patent: 6783634 (2004-08-01), Nozawa et al.
patent: 7-140635 (1995-06-01), None

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