Halftone phase shift mask, blank for the same, and methods of ma

Details Halftone phase shift mask, blank for the same, and methods of ma Halftone phase shift mask, blank for the same, and methods of ma

1997-10-22

1999-08-10

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

G03F 900

Patent

active

059357355

ABSTRACT:
A quartz glass substrate is placed in a DC or RF sputtering apparatus containing argon gas or oxygen gas. A zirconium compound target is reactively sputtered to form at least one halftone film made of a zirconium compound target on the substrate, thereby forming a blank for a halftone phase shift mask. The refractive index, the extinction coefficient, and the film thickness of the halftone film are so determined that the transmittance and the reflectance to exposure light are 2 to 15% and 30% or less, respectively, and the transmittance to inspection light is 30% or less. Examples of the zirconium compound are zirconium oxide, zirconium nitride, zirconium oxynitride, zirconium oxycarbide, zirconium carbonitride, zirconium halide, zirconium halide oxide, zirconium halide nitride, zirconium oxide silicide, zirconium nitride silicide, zirconium oxynitride silicide, zirconium oxycarbide silicide, zirconium carbonitride silicide, zirconium halide silicide, zirconium halide oxide silicide, and zirconium halide nitride silicide.

REFERENCES:
patent: 5547787 (1996-08-01), Ito et al.
patent: 5614335 (1997-03-01), Hashimoto et al.
patent: 5721075 (1998-02-01), Hashimoto et al.
P.F. Carcia, et al., "Materials Screening for Attenuating Embedded Phase-Shift Photoblanks for DUV and 193nm Photolithography", SPIE, vol. 2884, pp. 255-263.
Patent Abstracts of Japan, No. 08054725, Feb. 27, 1996.
Patent Abstracts of Japan, No. 08171196, Jul. 2, 1996.
B. Smith, et al., "The Effects of Excimer Laser Radiation on Attenuated Phase-Shift Masking Materials", SPIE, vol. 3051, pp. 236-244.

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