Half wave protection layers on injection lasers

Oscillators – Molecular or particle resonant type

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357 18, 357 52, H01S 319

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041785649

ABSTRACT:
A body of semiconductor material of an injection laser device, capable of operating at a power level up to a few milliwatts per micrometer of emitting width, has two opposed facet surfaces. On at least one of the facet surfaces is a protection layer of an insulating material having an optical thickness equal to approximately one-half the vacuum wavelength of the optical radiation emitted by the device.

REFERENCES:
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patent: 3821663 (1974-06-01), Brenn, Jr.
patent: 3849738 (1974-11-01), Hakki
patent: 3914465 (1975-10-01), Dyment et al.
patent: 3943462 (1976-03-01), Thompson
Ladany et al., "Infulence of Device Fabrication Parameters on Gradual Degradation of (AlGa)As CW Laser Diodes", Applied Physics Letters vol. 25, No. 12, Dec. 15, 1974, pp. 708-710.
Kressel et al., "Reliability Aspects and Facet Damage in High-Power Emission from (AlGa)As CW Laser Diodes at Room Temperature", RCA Review, vol. 36, Jun. 1975, pp. 230-239.
Ettenberg et al., Applied Physics Letters, vol. 18, No. 12, Jun. 15, 1971, pp. 571-573.
Alferov et al., Soviet Physics Semicond., vol. 8, No. 10, Apr. 1975, pp. 1321-1322.

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