Half-tone type phase shift mask and method for fabricating the s

Details Half-tone type phase shift mask and method for fabricating the s Half-tone type phase shift mask and method for fabricating the s

1994-12-29

1996-05-07

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430322, 430323, 430324, G03F 900

Patent

active

055145000

ABSTRACT:
There is disclosed a half-tone type phase shift mask comprising a transparent substrate on which a phase shift pattern and a chrome pattern, both provided with a window, are laminated in sequence, said window exposing a predetermined area of said transparent substrate therethrough, and said chrome pattern having a step near the window which is so thick as to permit penetration of only about 5 to 50% of an incident beam of light illuminated on said half-tone type phase shift mask. Such half-tone type phase shift mask is fabricated by: forming a phase shift layer on a transparent substrate; forming a light screen on the phase shift layer; selectively etching the light screen and the phase shift layer in sequence, to form a light screen pattern and a phase shift pattern, both provided with a window exposing a predetermined area of the transparent substrate; and removing the light screen pattern near said window at a predetermined thickness, to form a step near said window. It is capable of preventing the penetration of light at unintended areas, and thus is capable of providing a photosensitive pattern superior in smooth profile.

REFERENCES:
patent: 5409789 (1995-04-01), Ito

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