Half-tone stacked film, photomask-blank, photomask and...

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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C430S311000, C430S394000

Reexamination Certificate

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07625677

ABSTRACT:
A half-tone stacked film is designed so as to have a stacked structure of a first half-tone film and a second half-tone film, and the film thickness d, the refractive index n to exposure light and the extinction coefficient k of these half-tone films are designed so that one of these half-tone films becomes a phase advancement film and the other becomes a phase retardation film. When the film thickness (nm), the refractive index, and the extinction coefficient of the phase advancement film are represented by d(+), n(+)and k(+), respectively; and the film thickness (nm), the refractive index, and the extinction coefficient of the phase retardation film are d(−), n(−), and k(−), respectively; the phase advancement film has the relationship of k(+)>a1·n(+)+b1, and the phase retardation film has the relationship of k(−)<a2·n(−)+b2.

REFERENCES:
patent: 2002/0028392 (2002-03-01), Jin et al.
patent: 2003/0180631 (2003-09-01), Shiota et al.
patent: 2003/0219654 (2003-11-01), Ushida et al.
patent: 1 783 546 (2007-05-01), None
patent: 2003050454 (2003-02-01), None
patent: 2004-029746 (2004-01-01), None
English Translation of JP 2003050454 A Feb. 2003.

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