Half-tone self-aligning phase shifting mask

Details Half-tone self-aligning phase shifting mask Half-tone self-aligning phase shifting mask

1994-11-23

1995-12-26

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430321, 430322, G03F 900

Patent

active

054786797

ABSTRACT:
This invention describes the fabrication and use of a self-aligning phase shifting mask comprised of phase shifting material formed over a patterned layer of half-tone or partially transmitting material. The interaction of light passing through the phase shifting and partially transmitting areas of the mask, the phase shifting only areas of the mask, and the non phase shifting transparent areas of the mask provides greater image resolution and depth of focus tolerance than other lithography methods including other known phase shifting techniques.

REFERENCES:
patent: 5045417 (1991-09-01), Okamoto
patent: 5190836 (1993-03-01), Nakagawa et al.
patent: 5194344 (1993-03-01), Cathey, Jr. et al.
patent: 5194345 (1993-03-01), Rolfson
patent: 5194346 (1993-03-01), Rolfson et al.
patent: 5208125 (1993-05-01), Lowrey et al.
patent: 5217830 (1993-06-01), Lowrey
patent: 5225035 (1993-07-01), Rolfson
patent: 5288569 (1994-02-01), Lin
"Lithography's Leading Edge, Part 1: Phase Shift Technology", published in Semiconductor Technology International, Feb. 1992, pp. 42-47.

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