Half-tone phase shift masks and fabricating methods therefor inc

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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G03F 900

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057891168

ABSTRACT:
Half-tone phase shift masks (PSM) having a high transmittance and can be easy to fabricate are provided. The half-tone PSM includes a substrate which is transparent with respect to exposure light, a phase shifter pattern formed on the transparent substrate, and a phase shifting groove which can be formed by etching the transparent substrate. Methods for fabricating half-tone PSMs are also provided. The half-tone PSM can have a higher transmittance than that of a conventional half-tone PSM, and the phase shifting groove can have a uniform surface. Thus, a fine pattern having an excellent contrast can be formed using a short wavelength.

REFERENCES:
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patent: 5480747 (1996-01-01), Vasudev
Notification D'un Rapport de Recherche Preliminates Sans Responsde Obligatoire (Preliminary Search Report), FR 9710393, Dec.12, 1997.
Kang et al., "Chemically Amplified Silicon Containing Resist for ArF Excimer Laser Lithography", Journal of Photopolymer Science and Technology, vol. 10, No. 4, Jun. 24, 1997, pp. 585-588.

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