Half tone phase shift mask comprising second pattern layer on ba

Details Half tone phase shift mask comprising second pattern layer on ba Half tone phase shift mask comprising second pattern layer on ba

1998-08-25

2000-04-11

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430 22, G03F 900

Patent

active

060486503

ABSTRACT:
A half-tone phase shifting mask (HTPSM) with a back surface blind border alignment mark includes a shifter layer with a desired pattern on one surface of a transparent substrate, and a light shielding layer with a mark opening on another surface of the transparent substrate. In this case, the light ray passing through the mark opening is partially shielded by the shifter layer so that there is no light amplitude subtraction within the mark opening.

REFERENCES:
patent: 5387484 (1995-02-01), Doany et al.
patent: 5929997 (1997-07-01), Lin

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