Half-tone phase shift mask and patterning method using thereof

Details Half-tone phase shift mask and patterning method using thereof Half-tone phase shift mask and patterning method using thereof

2003-06-16

2008-12-09

Rosasco, Stephen (Department: 1795)

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Changeable reading

C430S322000

Reexamination Certificate

active

07461472

ABSTRACT:
A half-tone phase shift mask including at least a mask substrate, a half-tone phase shift layer and a sheltering layer. The half-tone phase shift layer is a strip-like profile that forms on the surface of the mask substrate. The sheltering layer is formed on the two ends of the half-tone phase shift layer so that a portion of the half-tone phase shift layer is exposed. The sheltering layer has a width greater than the half-tone phase shift layer.

REFERENCES:
patent: 6495297 (2002-12-01), Tu et al.
patent: 6531250 (2003-03-01), Kim
patent: 2002/0039692 (2002-04-01), Tanaka
patent: 2002/0177050 (2002-11-01), Tanaka
patent: 390977 (2000-05-01), None
patent: 442705 (2001-06-01), None

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