Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With housing or external electrode
Reexamination Certificate
2007-06-05
2007-06-05
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With housing or external electrode
C257SE23043, C257SE23044, C257SE23052, C257SE23020, C257SE23031, C257SE23014, C257SE23037, C257SE23039, C257SE23066, C257S178000, C257S666000, C257S698000, C257S696000, C257S691000, C257S685000, C257S723000, C257S692000, C257S724000, C257S728000, C257S676000, C257S735000, C257S674000, C363S147000, C363S132000, C361S310000, C361S437000, C361S437000, C174S260000, C174S050510
Reexamination Certificate
active
11202004
ABSTRACT:
A semiconductor package that includes two power semiconductor dies, such as power MOSFET dies, including vertical conduction MOSFETs, arranged in a half-bridge configuration is disclosed. The package may be mounted on a split conductive pad including two isolated die pads, each die pad being electrically connected to the second power electrode of the die that is on it. The split pad may include several conductive leads, including at least one output lead electrically connected to a first electrode of the first semiconductor die on the same side of the die as the control electrode and to the second electrode of the second die located on the opposite side of the second die from the control electrode.
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Cerezo Jorge
Connah Norman G.
Dubhashi Ajit
Pavier Mark
International Rectifier Corporation
Ostrolenk Faber Gerb & Soffen, LLP
Williams Alexander Oscar
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