Hafnium silicide target for gate oxide film formation and...

Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering

Reexamination Certificate

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Details

C204S298120, C419S038000, C419S048000, C419S049000

Reexamination Certificate

active

10362044

ABSTRACT:
The present invention relates to a hafnium silicide target for forming a gate oxide film composed of HfSi0.05-0.37. Obtained is a hafnium silicide target superior in workability and embrittlement resistance, and suitable for forming a HfSiO film and HfSiON film that may be used as a high dielectric gate insulation film in substitute for a SiO2film, and the manufacturing method thereof.

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Patent Abstracts of Japan, One page English Abstract of JP 08-020863.
Patent Abstracts of Japan, One page English Abstract of JP 08-020863 of Jan. 1996.

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