Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Reexamination Certificate
2007-07-10
2007-07-10
McDonald, Rodney G. (Department: 1753)
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
C204S298120, C419S038000, C419S048000, C419S049000
Reexamination Certificate
active
10362044
ABSTRACT:
The present invention relates to a hafnium silicide target for forming a gate oxide film composed of HfSi0.05-0.37. Obtained is a hafnium silicide target superior in workability and embrittlement resistance, and suitable for forming a HfSiO film and HfSiON film that may be used as a high dielectric gate insulation film in substitute for a SiO2film, and the manufacturing method thereof.
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Irumata Shuichi
Suzuki Ryo
Howson & Howson LLP
McDonald Rodney G.
Nippon Mining & Metals Co., Ltd.
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