Hafnium nitride buffer layers for growth of GaN on silicon

Details Hafnium nitride buffer layers for growth of GaN on silicon Hafnium nitride buffer layers for growth of GaN on silicon

2005-08-16

2005-08-16

Utech, Benjamin L. (Department: 1765)

Stock material or miscellaneous articles

All metal or with adjacent metals

Composite; i.e., plural, adjacent, spatially distinct metal...

C428S627000

Reexamination Certificate

active

06929867

ABSTRACT:
Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2m. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.

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