Hafnium-containing material for film formation, method for...

Details Hafnium-containing material for film formation, method for... Hafnium-containing material for film formation, method for...

2007-03-27

2007-03-27

Nazario-Gonzalez, Porfirio (Department: 1621)

Organic compounds -- part of the class 532-570 series

Organic compounds

Heavy metal containing

C556S054000, C427S248100, C427S255190, C427S255320

Reexamination Certificate

active

10939314

ABSTRACT:
A hafnium-containing material is presented for forming a film having excellent vaporization stability and higher film formation rate. Also a method for producing the film is presented. The hafnium-containing material for film formation has a bond of a hafnium atom with a nitrogen atom, or a bond of a hafnium atom and an oxygen atoms. Zr content contained in the material is equal to or less than 650 ppm.

REFERENCES:
Office Action (Notice of Grounds for Rejection) issued from the Japanese Patent Office dated Mar. 16, 2005.
Patent Abstracts of Japan for JP2002-249455 published Sep. 6. 2002.
Patent Abstracts of Japan for JP2002-093804 published Mar. 29, 2002.
“Description of the circumstances requiring accelerated examination” filed Feb. 18, 2005 with the Japanese Patent Office.
Patent Abstracts of Japan for JP11-335310 published Dec. 7, 1999.
Patent Abstracts of Japan for JP2002-069027 published Mar. 8, 2002.

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