Hafnium alloy target and process for producing the same

Details Hafnium alloy target and process for producing the same Hafnium alloy target and process for producing the same

2008-09-04

2011-11-22

Ip, Sikyin (Department: 1735)

Metal treatment

Process of modifying or maintaining internal physical...

Heating or cooling of solid metal

C148S669000, C148S670000, C148S671000, C148S672000, C148S421000, C438S785000, C257S629000

Reexamination Certificate

active

08062440

ABSTRACT:
A hafnium alloy target containing either or both of Zr and Ti in a gross amount of 100 wtppm-10 wt % in Hf, wherein the average crystal grain size is 1-100 μm, the impurities of Fe, Cr and Ni are respectively 1 wtppm or less, and the habit plane ratio of the plane {002} and three planes {103}, {014} and {015} lying within 35° from {002} is 55% or greater, and the variation in the total sum of the intensity ratios of these four planes depending on locations is 20% or less. As a result, obtained is a hafnium alloy target having favorable deposition property and deposition speed, which generates few particles, and which is suitable for forming a high dielectric gate insulation film such as HfO or HfON film, and the manufacturing method thereof.

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