Hafnium alloy target and process for producing the same

Details Hafnium alloy target and process for producing the same Hafnium alloy target and process for producing the same

2004-01-21

2008-12-02

Ip, Sikyin (Department: 1793)

Metal treatment

Stock

Titanium, zirconium, or hafnium base

C148SDIG015, C420S422000

Reexamination Certificate

active

07459036

ABSTRACT:
Provided is a hafnium alloy target containing either or both of Zr and Ti in a gross amount of 100 wtppm-10 wt % in Hf, wherein the average crystal grain size is 1-100 μm, the impurities of Fe, Cr and Ni are respectively 1 wtppm or less, and the habit plane ratio of the plane {002} and three planes {103}, {014} and {015} lying within 35° from {002} is 55% or greater, and the variation in the total sum of the intensity ratios of these four planes depending on locations is 20% or less. As a result, obtained is a hafnium alloy target having favorable deposition property and deposition speed, which generates few particles, and which is suitable for forming a high dielectric gate insulation film such as HfO or HfON film, and the manufacturing method thereof.

REFERENCES:
patent: 4333808 (1982-06-01), Bhattacharyya et al.
patent: 4619695 (1986-10-01), Oikawa et al.
patent: 4770948 (1988-09-01), Oikawa et al.
patent: 5196916 (1993-03-01), Ishigami et al.
patent: 5330589 (1994-07-01), Cheng et al.
patent: 5336378 (1994-08-01), Nishimura et al.
patent: 5458697 (1995-10-01), Ishigami et al.
patent: 5679983 (1997-10-01), Ishigami et al.
patent: 6207589 (2001-03-01), Ma et al.
patent: 6911619 (2005-06-01), Delzenne
patent: 0902102 (1999-03-01), None
patent: 59208044 (1984-11-01), None
patent: 60024342 (1985-02-01), None
patent: 02-015167 (1990-01-01), None
patent: 05-214521 (1993-08-01), None
patent: 06-306597 (1994-11-01), None
patent: 10-060631 (1998-03-01), None
patent: 11264885 (1999-09-01), None
patent: 2003-017491 (2003-01-01), None
Esp@cenet, One Page English Abstract of JP 61-107728, May 1986.
Esp@cenet, One Page English Abstract of JP 61-145828, Jul. 1986.
Esp@cenet, One Page English Abstract of JP 04-218912, Aug. 1992.

Affiliated with

Also associated with

Rating

Hafnium alloy target and process for producing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Hafnium alloy target and process for producing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hafnium alloy target and process for producing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4051917