H.sub.2 S Detector having semiconductor and noncontinuous inert

Details H.sub.2 S Detector having semiconductor and noncontinuous inert H.sub.2 S Detector having semiconductor and noncontinuous inert

1982-04-22

1983-06-07

Marantz, Sidney

Chemistry: analytical and immunological testing

Sulfur containing

Organic or sulfhydryl containing

73 23, 324 716, 422 90, 422 98, G01N 2704, G01N 2712, G01N 2716

Patent

active

043871658

ABSTRACT:
A method and apparatus for detecting hydrogen sulfide with improved longevity. The hydrogen sulfide detector includes a semiconductor comprised of indium oxide attached to an inert substrate. A noncontinuous film of an inert conductor such as gold is deposited on the semiconductor and means are provided for measuring a change in conductance of the semiconductor. In one embodiment tin oxide may be substituted for indium oxide. Also a method of detecting hydrogen sulfide including the steps of: coating a semiconductor with a noncontinuous film of an inert conductor, maintaining the temperature of the semiconductor in a range sufficient to insure proper response and recovery actions of the semiconductor when it is exposed to hydrogen sulfide; and exposing the coated semiconductor to a gas containing hydrogen sulfide while measuring the change in conductance in the semiconductor. The semiconductor may be made up of tin oxide or indium oxide and the inert semiconductor may be gold. The operational temperature for the semiconductor is preferably in the range of 150.degree. to 300.degree. C. In one embodiment the thickness of the semiconductor is at least 500 angstroms.

REFERENCES:
patent: 3479257 (1969-11-01), Shaver
patent: 3507145 (1970-04-01), Loh
patent: 3567383 (1971-03-01), Langley
patent: 3676820 (1972-07-01), Taguchi
patent: 3695848 (1972-10-01), Taguchi
patent: 3778229 (1973-12-01), Webster
patent: 3793605 (1974-02-01), Fehlner
patent: 3820958 (1974-06-01), Cheng
patent: 3901067 (1975-08-01), Boardman
patent: 4016524 (1977-04-01), Pompei
patent: 4030340 (1977-06-01), Chang
patent: 4169369 (1979-10-01), Chang
patent: 4197089 (1980-04-01), Willis
patent: 4223550 (1980-09-01), Takahama
patent: 4224280 (1980-09-01), Takahama
patent: 4277439 (1981-07-01), Yasuda
patent: 4324761 (1982-04-01), Harris
patent: 4338281 (1982-07-01), Treitinger
S. R. Morrison, "The Chemical Physics of Surfaces," Plenum Press, N.Y., 1977.

Affiliated with

Also associated with

Rating

H.sub.2 S Detector having semiconductor and noncontinuous inert does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with H.sub.2 S Detector having semiconductor and noncontinuous inert , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and H.sub.2 S Detector having semiconductor and noncontinuous inert will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2343377