H.F. amplifier

Amplifiers – With semiconductor amplifying device – Including field effect transistor

Patent

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Details

330279, H03F 316, H03G 330

Patent

active

042753619

ABSTRACT:
A dual gate FET has a first gate connected to receive an HF input signal and a second gate which is grounded to HF. The transistor output circuit is connected to a supply voltage terminal. A voltage divider comprising a resistor and a zener diode is connected between the supply voltage terminal and ground, the top of the voltage divider being connected to the second gate electrode. By varying the supply voltage, the amplifier gain can be adjusted. The supply voltage can be adjusted manually by a potentiometer. Alternatively, it can be adjusted automatically according to the strength of the HF input signal so that as the signal strength increases, the gain is reduced. The circuit is amenable to implementation using JFET, IGFET and MESFET transistors.

REFERENCES:
patent: 3480873 (1969-11-01), Carter

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