Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1979-07-23
1981-06-23
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330279, H03F 316, H03G 330
Patent
active
042753619
ABSTRACT:
A dual gate FET has a first gate connected to receive an HF input signal and a second gate which is grounded to HF. The transistor output circuit is connected to a supply voltage terminal. A voltage divider comprising a resistor and a zener diode is connected between the supply voltage terminal and ground, the top of the voltage divider being connected to the second gate electrode. By varying the supply voltage, the amplifier gain can be adjusted. The supply voltage can be adjusted manually by a potentiometer. Alternatively, it can be adjusted automatically according to the strength of the HF input signal so that as the signal strength increases, the gain is reduced. The circuit is amenable to implementation using JFET, IGFET and MESFET transistors.
REFERENCES:
patent: 3480873 (1969-11-01), Carter
Comfort James T.
Merrett N. Rhys
Mullins James B.
Sharp Mel
Texas Instruments Deutschland GmbH
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