Amplifiers – Parametric amplifiers – Semiconductor type
Patent
1978-09-19
1980-09-23
Moskowitz, Nelson
Amplifiers
Parametric amplifiers
Semiconductor type
330 47, 315 3, 315 5, H01S 100, H01J 2316
Patent
active
042245761
ABSTRACT:
An apparatus for amplifying coherent radiation at millimeter and submillimeter wavelengths includes the combination of a travelling-wave-tube cyclotron-maser-amplifier structure and a magnetron-injection electron gun. The amplifier structure includes a fast-wave drift tube and an electromagnetic wave launcher within the bore of a superconducting magnet. The magnetron-injection electron gun is also within the bore of the magnet and is coupled to the drift tube. As a travelling wave is launched in a preferred mode in the drift tube, the electron gun injects an annular beam of relativistic electrons having both large energy transverse to the axis of the device and small energy spread into the drift tube so that the electrons gyrate at their cyclotron frequency in orbits about the lines of the axial magnetic field produced by the magnet. The travelling wave is amplified by extracting energy from the relativistic electron beam. Efficiency of this energy transfer is optimized by tapering the magnetic field near the output end of the wave-beam interaction region.
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Chu Kwo R.
Drobot Adam T.
Granatstein Victor L.
Safter J. Laurence
Sprangle Phillip
Moskowitz Nelson
Ranucci Vincent J.
Schneider Philip
Sciascia R. S.
The United States of America as represented by the Secretary of
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