Gunn effect shift register

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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365169, 357 3, H01L 2726, G11C 1928

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042425972

ABSTRACT:
A device derived from a bulk semiconductor component called "Gunn-effect triode"; utilizing the propagation of travelling domains between gate and anode of said triode. Forming a register element with such a device consists of a "writing arm" with a semiconductor band of Ga As organized into a Gunn-effect triode and a "reading arm" which is a similar band of Ga As having two electrodes instead of three i.e. an anode and a cathode. The two bands are connected by a bridge of Ga As. The travelling domain triggered by a digital signal is propagated by a lateral extension across the bridge from the writing arm to the reading arm. An n-bit register is carried out by arranging a series of register elements in such a manner that the gate of the first band of the first element forms the input terminal of the register and the cathode of the second band of the first element is connected to the gate of the first band of the second element and so on up to the second band of the n.sup.th element that is the output terminal of the register.

REFERENCES:
patent: 3365583 (1968-01-01), Gunn
patent: 3535601 (1970-10-01), Matsukura et al.
patent: 3621306 (1971-11-01), Schickle
patent: 3659158 (1972-04-01), Shoji
patent: 3691481 (1972-09-01), Kataoka et al.
patent: 3766372 (1973-10-01), Kataoka et al.
patent: 3836989 (1974-09-01), Kataoka
patent: 3918009 (1975-11-01), Claxton et al.
patent: 4047199 (1977-09-01), Kataoka
Mause, Electronics Letters, vol. 11, No. 17, pp. 408-409, Aug. 21, 1975.
Hartnagel, Gunn Effect Logic Devices, (American Elseview, Pub., N.Y., 1973), pp. 58, 103-105.

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