Gunn diode having a graded aluminum gallium arsenide active laye

Details Gunn diode having a graded aluminum gallium arsenide active laye Gunn diode having a graded aluminum gallium arsenide active laye

1999-03-25

2000-08-29

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Intervalley transfer

257191, 257196, 331107G, H01L 4702, H03B 512

Patent

active

061112658

ABSTRACT:
A Gunn diode includes a layered structure including at least a cathode layer, an anode layer, and an active region interposed between the cathode and anode layers, wherein at least a portion of the active region is an AlGaAs layer.

REFERENCES:
patent: 4649405 (1987-03-01), Eastman
patent: 4801982 (1989-01-01), Couch et al.
patent: 4914489 (1990-04-01), Awano
Couch, N. R. et al. "Hot Electron Injection in Millimetre Wave Gun Diodes." Solid-State Electronics, vol. 32, No. 12, pp. 1685-1688, 1989.
Dale, I. et al. Fundamental Mode Graded Gap Gunn Diode Operation at 77 and 84 GHz. Proc. Microwaves Conf. London 1994, pp. 248-251.

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