Guided-wave photoreceptor based on quantum wells made of semicon

Details Guided-wave photoreceptor based on quantum wells made of semicon Guided-wave photoreceptor based on quantum wells made of semicon

1993-03-22

1995-03-14

Nelms, David C.

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

385 9, H01J 4014

Patent

active

053978897

ABSTRACT:
Guided-wave photoreceptor based on quantum wells made of semiconductor materials, particularly for coherent communications system with polarization diversity.
This photoreceptor has at least one pair composed of a first photodetector (76) and a second photodetector (78). At least the first photodetector is formed on a semiconductor substrate (94) and has a multilayer ribbon with multiple quantum wells made of semiconductor material (100); this multilayer ribbon is provided to guide an incident light; the first photodetector is capable of absorbing the transverse magnetic component of that light, whose electrical field has a component perpendicular to the plane of the multilayer; the transverse electrical component of that light is virtually not absorbed in the first photodetector; the second photodetector is provided to absorb this transverse electrical component.

REFERENCES:
patent: 4966431 (1990-10-01), Heismann
patent: 5117469 (1992-05-01), Cheung et al.
patent: 5125050 (1992-06-01), Deri
Article by Zah et al., Electronic Letters, vol. 27, No. 10, May 9, 1991 pp. 838-839.
Article by Choa et al., IEEE Photonics Technology Letters, vol. 1, No. 11, Nov. 1989, pp 376-378.
Article by Wehmann et al., and Optoelektronik, vol. 21, No. 5, Oct. 1989, pp. 42-51.
French Search Report-FR 9203453-FA 472233.

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