Guard ring structure for a Schottky diode

Details Guard ring structure for a Schottky diode Guard ring structure for a Schottky diode

2005-09-27

2005-09-27

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Forming schottky junction

C257S484000

Reexamination Certificate

active

06949454

ABSTRACT:
A Schottky device having a substrate layer of a first conductivity type having a surface, and a guard ring formed over the surface of the substrate layer and also surrounding a barrier region of the substrate layer. The guard ring has a gate of a second conductivity type disposed over a dielectric layer. A metal can be formed over the barrier region to form a Schottky junction.

REFERENCES:
patent: 5696025 (1997-12-01), Violette et al.
patent: 6121122 (2000-09-01), Dunn et al.
patent: 6399413 (2002-06-01), Krutsick
patent: 6597050 (2003-07-01), Dunn et al.
patent: 2002/0008237 (2002-01-01), Chang et al.
patent: 2002/0135038 (2002-09-01), Buchanan et al.
patent: 2003/0022474 (2003-01-01), Grover et al.

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