Guard ring for mitigation of parasitic transistors in junction i

Details Guard ring for mitigation of parasitic transistors in junction i Guard ring for mitigation of parasitic transistors in junction i

1995-12-13

1997-09-23

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

With pn junction isolation

257494, 257556, 257557, H01L 2900, H01L 2358

Patent

active

056708211

ABSTRACT:
A guard ring with the same conductivity as a device pocket surrounds the pocket and a pocket isolation ring to establish a parasitic transistor that conducts current between the guard ring and the pocket when the pocket voltage is driven sufficiently below the substrate voltage. The guard ring is connected to a voltage supply for the circuit which, together with its shorter current path, allows the parasitic transistor to harmlessly divert current away from unwanted inter-pocket parasitic transistors.

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