Guard ring extension to prevent reliability failures

Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – Mesa structure

Reexamination Certificate

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Details

C257S127000, C257S170000, C257S409000, C257S484000, C257S620000, C257SE23002, C257SE29013

Reexamination Certificate

active

07968976

ABSTRACT:
An embodiment of the present invention is a technique to prevent reliability failures in semiconductor devices. A trench is patterned in a polyimide layer over a guard ring having a top metal layer. A passivation layer is etched at bottom of the trench. A capping layer is deposited on the trench over the etched passivation layer. The capping layer and the top metal layer form a mechanical strong interface to prevent a crack propagation.

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