GTO thyristor capable of preventing parasitic thyristors from be

Details GTO thyristor capable of preventing parasitic thyristors from be GTO thyristor capable of preventing parasitic thyristors from be

1993-03-31

1994-03-29

Ngo, Ngan

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257122, 257124, 257128, 257132, 257135, 257147, 257152, 257153, 257163, 257167, H01L 2974, H01L 2702, H01L 2910

Patent

active

052987698

ABSTRACT:
A GTO thyristor includes a p-type emitter layer, an n-type base layer, a p-type base layer and an n-type emitter layer. An additional n-type layer is formed on the p-type base layer next to the n-type emitter layer An additional p.sup.+ -type layer is formed on the additional n-type layer and stretches to the n-type emitter layer. An anode electrode and a cathode electrode are disposed respectively on the n-type emitter layer and the p-type base layer. The n-type emitter layer and the additional p.sup.+ -type layer are connected with each other by a floating electrode. A first gate electrode is disposed on the additional p.sup.+ -type layer, additional n-type layer and p-type base layer with an insulating film interposed therebetween so as to form a first FET. A second gate electrode is disposed on the n-type base layer, p-type base layer and n-type emitter layer with an insulating film interposed therebetween so as to form a second FET. A thyristor having such a configuration can effectively prevent a latched-up condition caused by parasitic transistors or thyristors to ensure turn off operations of the host thyristor.

REFERENCES:
patent: 4760431 (1988-07-01), Nakagawa et al.
patent: 4967255 (1990-10-01), Bauer et al.
patent: 5105244 (1992-04-01), Bauer
patent: 5144400 (1992-09-01), Bauer
Baliga, Proceedings of 1990 International Symposium on Power Semiconductor Devices & ICs, pp. 117-121. "The MOS-Gated Emitter Switched Thyristor".

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