GTO-thyristor

Details GTO-thyristor GTO-thyristor

1994-03-11

1995-02-07

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With extended latchup current level

257151, 257153, 257152, H01L 2974, H01L 29747, H01L 29743

Patent

active

053878060

ABSTRACT:
The semiconductor substrate of a GTO-Thyristor is structured at a cathode-side such that the cathode electrode lies in a first uppermost level of and in a second level lying there below. A gate contact lies in a third lowest level. Passivation layers extend only over the second and third levels. The cathode electrode also contacts the cathode emitter zone in the second level. It is overlapped there by the passivation layers.

REFERENCES:
patent: 4388635 (1983-06-01), Watanabe et al.
patent: 4618877 (1986-10-01), Araki et al.
patent: 4829348 (1989-05-01), Brosch et al.
patent: 4843449 (1989-06-01), Jaecklin et al.

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