Growth technique for silicon-on-ceramic

Details Growth technique for silicon-on-ceramic Growth technique for silicon-on-ceramic

1979-09-28

1981-02-24

Hoffman, James R.

Stock material or miscellaneous articles

Composite

Of silicon containing

427 74, 427 75, 427265, 427266, 427402, 4274432, B05D 118, H01L 3100

Patent

active

042528615

ABSTRACT:
The present invention is an improvement to the method of growing silicon films on a substrate by bringing the substrate in contact with molten silicon. The improved growth technique may be classified as an asymmetric mode of growth of silicon on the substrate and is characterized by the substrate being maintained at a higher temperature than the solidification of silicon in the area of the substrate where the silicon layer growth is taking place, that is in the area of the liquid-solid interface. The higher temperature of the substrate causes the liquid-solid interface to be tilted to be nearly parallel to the substrate surface but inclined at a reentrant angle, so that the leading edge of the crystallization front is away from the substrate. This provides several advantages including increased growth speed, a nonhomogeneous doping of the silicon layer, that is an impurity concentration gradient and results in a high-low junction at the back surface and gives the back surface field effect.

REFERENCES:
patent: 4112135 (1978-09-01), Heaps et al.
patent: 4128680 (1978-12-01), Heaps et al.
patent: 4137355 (1979-01-01), Heaps et al.

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