Growth substrate heating arrangement for UHV silicon MBE

Details Growth substrate heating arrangement for UHV silicon MBE Growth substrate heating arrangement for UHV silicon MBE

1983-02-11

1985-01-08

Shaw, Clifford C.

Electric heating

Heating devices

Combined with container, enclosure, or support for material...

118725, 219411, 219354, H05B 100, H01L 2120

Patent

active

044928521

ABSTRACT:
A substrate heating arrangement suitable for use in ultra-high vacuum MBE includes a filament responsive to a DC current for generating thermal energy, a metallic enclosure surrounding the filament and having an aperture at one end thereof, an intermediate semiconductor substrate parallel to and separated from a semiconductor growth substrate, and a substrate support mounted to the enclosure capable of holding the substrates in the prescribed relationship.
The intermediate semiconductor substrate regulates the temperature on the surface of the semiconductor growth substrate to be less than or equal to a fixed temperature (approximately 1100.degree. C. for silicon) regardless of the DC current applied to the filament.

REFERENCES:
patent: 3536892 (1970-10-01), Walther
patent: 3842794 (1974-10-01), Ing
patent: 4101759 (1978-07-01), Anthony
"Alloying Ohmic Contacts . . . ", W. Walter, IBM Tech. Disc. Bull., vol. 14, No. 6, Nov. 1971, p. 1940.
Becker, G. E., "Acceptor Dopants in Silicon M.B.E.", Journal of Applied Physics, vol. 48, No. 8, Aug. 1977, pp. 3395-3399.
Ota, Y., "Si Molecular Beam Epitaxy . . . ", J. Electrochem. Soc.: Solid-State Science and Tech., Nov. 1977, vol. 124, No. 11, pp. 1795-1802.
Ota, Y., "Silicon Molecular Beam Epitaxy . . . ", J. Appl. Phys., 51(2), Feb. 1980, pp. 1102-1110.
Tabe, M., "Effect of Growth Temperature on Si MBE Film", Japanese Journal of Applied Physics, vol. 20, No. 4, Apr. 1981, pp. 703-708.
Sugiura, H., "Growth of Dislocation-Free . . . ", J. Vac. Sci. Technology 19(2), Jul./Aug. 1981, pp. 157-160.
Tabe, M., "Etching of SiO.sub.2 Films by Si . . . ", Jap. J. Appl. Phys., vol. 21, No. 3, Mar. 1982, pp. 534-538.

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