Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2003-08-02
2004-06-22
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S013000, C257S088000, C257S094000, C257S096000, C257S103000, C257S918000, C438S022000, C438S024000, C438S046000, C438S047000
Reexamination Certificate
active
06753552
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates generally to the field of Light-Emitting Diodes (LEDs), and particularly to an LED structure that employs lateral growth technology to selectively grow a Gallium-nitride (GaN) epitaxial layer.
2. The Prior Arts
GaN-based compound semiconductors applied in light-emitting diodes (LEDs) or laser diodes (LDs) are widely known, which are generally cultivated and grown on a sapphire substrate. However, the threading dislocation density of a GaN compound grown on a sapphire substrate is as high as 1×10
9
units/cm
2
because the lattice mismatch between GaN and sapphire is as great as about 16% that could badly affect the reliability and performance of a light-emitting device.
To eliminate the defect, Taiwan Patent No. 501289 teaches an epitaxial lateral over-growing (ELO) method to improve the defect density in vertical caused by the mentioned lattice mismatch phenomenon.
Unfortunately, it is rather difficult to cut an as-grown chip into grains in due shapes with a diamond knife owing to the extreme hardness of the GaN compounds. Hence, a grinding process for thinning the chip to approximately 85 &mgr;m and an extra isolation process for lowering the rate of defective product are inevitable.
SUMMARY OF THE INVENTION
A primary object of the present invention is to grow a buffer layer on a patterned silicon dioxide layer of an epitaxially grown LED structure by adjusting the mixing ratio between a growing gas and an etching gas for control of lateral growth, without needing any extra isolation process.
Another object of the present invention is to simplify the growing process of LED by means of a lateral growth technology and to obtain a lower stray capacitance for raising the external quantum efficiency.
For more detailed information regarding advantages or features of the present invention, at least an example of preferred embodiment will be described below with reference to the annexed drawings.
REFERENCES:
patent: 6015979 (2000-01-01), Sugiura et al.
patent: 6121121 (2000-09-01), Koide
Chen Lung-Chien
Chien Fen-Ren
Lan Wen-How
Formosa Epitaxy Incorporation
Huynh Andy
Nelms David
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