Growth process of a crystalline gallium nitride based...

Details Growth process of a crystalline gallium nitride based... Growth process of a crystalline gallium nitride based...

2005-02-23

2008-12-09

Chen, Jack (Department: 2891)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S046000

Reexamination Certificate

active

07462505

ABSTRACT:
In a method of forming a crystalline GaN-based material, a first nucleation layer is formed on a substrate at a first temperature, followed with forming a second nucleation layer at a second temperature different from the first temperature. The first and second nucleation layers are composed of AlxInyGa(1-x-y)N. Subsequently, a layer of a crystalline GaN-based compound is epitaxy grown on the second nucleation layer.

REFERENCES:
patent: 5290393 (1994-03-01), Nakamura
patent: 5686738 (1997-11-01), Moustakas
patent: 6281522 (2001-08-01), Ishibashi et al.
patent: 2002/0030200 (2002-03-01), Yamaguchi et al.
patent: 2002/0190259 (2002-12-01), Goetz et al.
patent: 2006/0060873 (2006-03-01), Tu et al.

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