Metal treatment – Compositions – Heat treating
Patent
1978-07-28
1980-02-05
Rutledge, L. Dewayne
Metal treatment
Compositions
Heat treating
136 89TF, 148174, 148175, 357 91, 427 86, H01L 21263, H01L 2126
Patent
active
041871260
ABSTRACT:
A method of grain-orienting the crystal structure of a layer of semiconductor material by application of a raster scanning electron beam to a layer of polycrystalline semiconductor material which has been previously formed on a substrate, such as by sputter-plasma film deposition. The method comprises electron beam lithography computer-applied to the crystal growth and orientation of a polycrystalline thin sheet of silicon or other semiconductor material.
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McKinney Charles N.
Oertle Don H.
Radd Fred J.
Collins Richard W.
Conoco Inc.
Roy Upendra
Rutledge L. Dewayne
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