Growth of synthetic diamonds having altered electrical conductiv

Details Growth of synthetic diamonds having altered electrical conductiv Growth of synthetic diamonds having altered electrical conductiv

1979-08-20

1981-07-07

Meros, Edward J.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 252502, 357 61, 423446, H01L 2120, H01L 2126

Patent

active

042772931

ABSTRACT:
A method of growing a diamond crystal which comprises bombarding the diamond with a flux of carbon ions of sufficient energy to penetrate the diamond crystal and cause crystal growth which is at least predominantly internal, the temperature of the crystal being at least 400.degree. C. and less than the graphitization temperature, such that the diamond crystal structure is maintained during growth.

REFERENCES:
patent: 3142595 (1964-07-01), Wentorf
patent: 3148161 (1964-09-01), Wentorf et al.
patent: 3383567 (1968-05-01), King et al.
patent: 3630679 (1971-12-01), Angus
patent: 3961103 (1976-06-01), Aisenberg
patent: 4191735 (1980-03-01), Nelson et al.
Hauser et al., "Applied Physics Letters," vol. 30, No. 3, Feb. 1, 1977.
Vavilov et al., "Int. Conf. on Applications of Ion Beams in Semiconductor Tech.," Genoble, May 1967, pp. 353-368.

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