Growth of synthetic diamonds

Details Growth of synthetic diamonds Growth of synthetic diamonds

1978-02-17

1980-03-04

Meros, Edward J.

Chemistry of inorganic compounds

Carbon or compound thereof

Elemental carbon

204173, 252502, C01B 3106

Patent

active

041917359

ABSTRACT:
A method of growing a diamond crystal which comprises bombarding the diamond with a flux of carbon ions of sufficient energy to penetrate the diamond crystal and cause crystal growth which is at least predominantly internal, the temperature of the crystal being at least 400.degree. C. and less than the graphitisation temperature, such that the diamond crystal structure is maintained during growth.

REFERENCES:
patent: 3030188 (1962-04-01), Eversole
patent: 3175885 (1965-03-01), Brinkman et al.
patent: 3297407 (1967-01-01), Wentorf
patent: 3371996 (1968-03-01), Hibshman
patent: 3961103 (1976-06-01), Aisenberg
Aisenburg et al., "J. Applied Physics," vol. 42, No. 7, 1971, pp. 2953-2958.
Angus et al., "J. Applied Physics," vol. 39, No. 6, 1968, pp. 2915-2922.

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