Growth of single crystal Cadmium-Indium-Telluride

Details Growth of single crystal Cadmium-Indium-Telluride Growth of single crystal Cadmium-Indium-Telluride

1984-07-20

1986-09-23

Lacey, David L.

Chemistry of inorganic compounds

Selenium or tellurium or compound thereof

156616R, 156624, 156DIG70, 156DIG72, C01B 1900, C30B 2946

Patent

active

046134956

ABSTRACT:
A method for producing a large high-quality single crystal of Cadmium-Indium-Telluride is disclosed wherein a stoichiometric crystal is produced from a non-stoichiometric melt composition. An initial melt composition corresponding to approximately 62 mole % to 90 mole % In.sub.2 Te.sub.3 and 38 mole % to 10 mole % CdTe, respectively, is prepared and sealed in an evacuated ampoule and then heated to completely melt the mixture. Growth of a single crystal of CdIn.sub.2 Te.sub.4 is initiated and maintained from the non-stoichiometric melt mixture by lowering the melt through its corresponding phase-equilibrium melting point. Upon cooling to room temperature, the large single crystal so produced is removed from the ampoule.

REFERENCES:
patent: 1793672 (1931-02-01), Brigman
patent: 3060065 (1962-10-01), Orem
patent: 3622399 (1971-11-01), Johnson
patent: 4011074 (1977-03-01), Dietl et al.
patent: 4141777 (1979-02-01), Matveev et al.
A. L. Gentile et al., Melt Growth of Ternary Chalcogenides, Mat. Res. Bull. vol. 4, pp. 869-876, 1969.

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