Growth of semiconductor compounds by liquid phase epitaxy

Details Growth of semiconductor compounds by liquid phase epitaxy Growth of semiconductor compounds by liquid phase epitaxy

1977-04-21

1978-08-29

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148172, 156622, H01L 21208

Patent

active

041101332

ABSTRACT:
A method of growing semiconductor compounds which are formed from elements of group III with elements of group V by liquid phase epitaxy. A suitable solvent is provided in contact with a source of the compound to be grown, the solution is heated to a predetermined temperature and the solute is allowed to come to equilibrium with the solvent. The solution is then subjected to a rapid, relatively small decrease in temperature to produce supersaturation of the solution. The temperature is then maintained substantially constant and, after a predetermined first period of time at the constant temperature, the solution is brought into contact with a substrate on which the compound is to be grown for a predetermined second period of time.

REFERENCES:
patent: 3631836 (1972-01-01), Jarvela et al.
patent: 3664294 (1972-05-01), Solomon
patent: 3665888 (1972-05-01), Bergh et al.
patent: 3791887 (1974-02-01), Deitch
patent: 3881037 (1975-04-01), Grandia et al.
patent: 3950195 (1976-04-01), Rode et al.

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