Growth of semiconductor compounds

Details Growth of semiconductor compounds Growth of semiconductor compounds

1979-03-06

1981-12-29

McIntosh, John P.

Coating apparatus

With heat exchange, drying, or non-coating gas or vapor...

With housing surrounding or engaging coating means

118412, 118415, H01L 21208, B05C 318

Patent

active

043076807

ABSTRACT:
Semiconductor compounds which are alloys of group III-V compounds are grown by a liquid phase epitaxy method which includes heating growth apparatus in a reducing atmosphere while maintaining a solvent for the compound, a source of the group III-V compound and another element of the alloy separate from each other. After heating to reduce oxides, the element is added to the solvent, the source is brought into contact with the solvent and the resulting solution is brought into contact with a substrate to effect growth of the compound. Apparatus for carrying out the method is also described.

REFERENCES:
patent: 3491720 (1970-01-01), Harris
patent: 3972753 (1976-08-01), Legros et al.
patent: 4028146 (1977-06-01), Logan et al.
patent: 4075043 (1978-02-01), Clarke et al.
patent: 4088514 (1978-05-01), Hara et al.
patent: 4137865 (1979-02-01), Cho

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