Fishing – trapping – and vermin destroying
Patent
1988-06-02
1989-07-18
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437130, 437133, 437 91, 437 92, 148DIG101, 148DIG23, 148DIG95, 148DIG66, 357 16, 357 17, 357 63, 156621, H01L 21208, H01L 2120
Patent
active
048493732
ABSTRACT:
In a method for Liquid Phase Epitaxy (LPE) of semi-insulating InP, a solution of P, Ti and a p-type dopant in molten In is cooled in a non-oxidizing ambient at a surface of a substrate to grow an epitaxial layer of doped InP on the surface. The concentration of p-type dopant in the solution is such as to provide a concentration of p-type dopant in the grown epitaxial layer greater than the aggregate concentration of any residual contaminants in the grown epitaxial layer, and the concentration of Ti in the solution is such as to provide a concentration of Ti in the grown epitaxial layer greater than the concentration of p-type dopant in the grown epitaxial layer. The required melt concentrations are determined empirically. The method can be performed at temperature below 650 degrees Celsius and is particularly suited to the LPE growth of semi-insulating InP to isolate InP-InGaAsP buried heterostructure lasers.
REFERENCES:
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Zah et al., "High Speed 1.3 .mu.m GalnAsP p-Substrate Buried-Crescent Lasers with Semi-Insulating Fe/Ti-Doped InP Current Blocking Layers", Electronics Letters, vol. 24, No. 11, May 26, 1988, pp. 695-697.
Coquille et al., "Synthesis, Crystal Growth and Characterization of InP", J. Crystal Growth, vol. 64, 1983, pp. 23-31.
Benyon William
Knight D. Gordon
Chaudhuri Olik
Junkin C. W.
Northern Telecom Limited
Wilczewski M.
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