Growth of polycrystalline CaF.sub.2 via low temperature OMCVD

Details Growth of polycrystalline CaF.sub.2 via low temperature OMCVD Growth of polycrystalline CaF.sub.2 via low temperature OMCVD

1989-07-11

1991-06-25

Morgenstern, Norman

Coating processes

Coating by vapor, gas, or smoke

Base includes an inorganic compound containing silicon or...

427255, 4272552, C23C 1630, C23C 1646

Patent

active

050265750

ABSTRACT:
The present invention involves the use of organocalcium precursors for the chemical vapor deposition of thin CaF.sub.2 films under exceptionally mild conditions. This method is based on utilizing an organocalcium compound and a source of fluorine in a chemical vapor deposition reaction to form CaF.sub.2.

REFERENCES:
Schowalter et al., J. Vac. Sci. Technol., vol. A 4 (1986) 1026-1032.
Burns et al., J. Organomet. Chem., vol. 325 (1987) 31-37.
Benac et al., Chemistry of Materials, vol. 1 (1989) 289-290.

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