Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2006-05-31
2008-03-04
Fourson, George R. (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C438S767000, C438S481000, C438S590000, C438S604000
Reexamination Certificate
active
07338828
ABSTRACT:
A method of growing planar non-polar m-plane III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane silicon carbide (m-SiC) substrate, using metalorganic chemical vapor deposition (MOCVD). The method includes performing a solvent clean and acid dip of the substrate to remove oxide from the surface, annealing the substrate, growing a nucleation layer such as an aluminum nitride (AlN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the nucleation layer using MOCVD.
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DenBaars Steven P.
Imer Bilge M.
Nakamura Shuji
Speck James S.
Fourson George R.
Gates & Cooper LLP
Japan Science and Technology Agency
Parker John M.
The Regents of the University of California
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