Growth of oxide exchange bias layers

Details Growth of oxide exchange bias layers Growth of oxide exchange bias layers

1996-12-09

1998-07-21

Pianalto, Bernard

Coating processes

Direct application of electrical, magnetic, wave, or...

Ion plating or implantation

20419211, 427127, C23C 1408

Patent

active

057832625

ABSTRACT:
An oxide (NiO, CoO, NiCoO) antiferromagnetic exchange bias layer produced by ion beam sputtering of an oxide target in pure argon (Ar) sputtering gas, with no oxygen gas introduced into the system. Antiferromagnetic oxide layers are used, for example, in magnetoresistive readback heads to shift the hysteresis loops of ferromagnetic films away from the zero field axis. For example, NiO exchange bia layers have been fabricated using ion beam sputtering of an NiO target using Ar ions, with the substrate temperature at 200.degree. C., the ion beam voltage at 1000V and the beam current at 20 mA, with a deposition rate of about 0.2 .ANG./sec. The resulting NiO film was amorphous.

REFERENCES:
patent: 4560577 (1985-12-01), Mirtich et al.
patent: 4604181 (1986-08-01), Mirtich et al.
patent: 4664980 (1987-05-01), Sovey et al.
patent: 4828905 (1989-05-01), Wada et al.
UCRL-JC-122960, "NiO Exchange Bias Layers Grown By Direct Ion Beam Sputtering of a Nickel Oxide Target", R.P. Michel et al., Mar. 1, 1996.

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