Growth of lattice-graded epilayers

Details Growth of lattice-graded epilayers Growth of lattice-graded epilayers

1985-01-30

1985-10-22

Saba, William G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29576E, 29578, 148DIG67, 148DIG72, 148DIG97, 148DIG160, 136261, 136262, 156612, 357 16, H01L 2120, H01L 2926

Patent

active

045486581

ABSTRACT:
A method is disclosed for growing an epitaxial layer composed of semiconductor material belonging to the cubic crystal system on a substrate, where the lattice constant of the epitaxial layer is graded from an initial lattice constant adjacent to the substrate to a final lattice constant on the surface of the epitaxial layer. Growth surfaces are formed on the substrate, and the epitaxial layer is grown as its lattice constant changes from the initial lattice constant to the final lattice constant.

REFERENCES:
patent: 3721583 (1973-03-01), Blakeslee
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patent: 4088515 (1978-05-01), Blakeslee et al.
patent: 4115164 (1978-09-01), Jager et al.
patent: 4174422 (1979-11-01), Matthews et al.
patent: 4194935 (1980-03-01), Dingle et al.
patent: 4261771 (1981-04-01), Dingle et al.
patent: 4274890 (1981-06-01), Varon

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