Growth of III-V layers containing arsenic, antimony and phosphor

Details Growth of III-V layers containing arsenic, antimony and phosphor Growth of III-V layers containing arsenic, antimony and phosphor

1976-04-13

1977-06-28

Edlow, Martin H.

357 61, 357 16, 357 18, H01L 3300

Patent

active

040329518

ABSTRACT:
Gallium arsenide antimonide phosphide (GaAsSbP) has been successfully grown on a gallium arsenide substrate by liquid phase epitaxy. A critical amount of phosphorus initially in growth solution is depleted with consequent grading of lattice constant and bandgap in the epitaxially grown layer. The substrate and graded layer as a subassembly are well suited for use in electronic devices such as double heterostructure lasers, light-emitting diodes, Schottky barrier diodes, and p-n junction photodiodes in the near-infrared low loss region of optical fibers.

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